Giant planar Hall effect in epitaxial (Ga,Mn)as devices.
نویسندگان
چکیده
Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.
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عنوان ژورنال:
- Physical review letters
دوره 90 10 شماره
صفحات -
تاریخ انتشار 2003